| PART |
Description |
Maker |
| W7MG1M32SVX90BNI W7MG1M32SVX70BNI W7MG1M32SVX-BN W |
8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module
|
WEDC[White Electronic Designs Corporation]
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
| M29W640DT M29W640DT90ZA6T M29W640DB M29W640DB70N1E |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB7 |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
|
STMicroelectronics
|
| M58LW064D110ZA6T M58LW064D M58LW064D110N1T M58LW06 |
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB7 |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory
|
ST Microelectronics
|
| M29W640FT60N6E M29W640FT60N6F M29W640FT60ZA6E M29W |
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29W640FT70N6E M29W640FT70N6F M29W640FB70ZA6F M29W |
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| KMM5364005BSW |
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
Samsung Semiconductor
|
| N08T1630C1BT N08T1630CXB N08T1630C1BT2 N08T1630C1B |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| N08L63W2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
|
ON Semiconductor
|
